Gallium Nitride (GaN) LEDs and laser diodes are currently in use for many applications, but these suffer from several drawbacks. GaN laser diodes emit from the edge, not the surface, which requires bulky structures and advanced engineering to align them in useful orientations. University of Califo.....
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Eliminates polarization fields More flexibility in growth variables
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The new UC technology provides the following benefits: Enhanced oxidation rates; Controllability of the aperture shape and size; Enhanced effectiveness of the resulting optical and/or current apertures.
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Researchers at UC San Diego have developed a method of p-doping zinc oxide nanostructures. This wideband gap semiconductor has been difficult to p-dope. The realization of p-doping enables complimentary doping and novel electronic devices, such as transistors, vertical FETs, possibly UV, visible, an.....
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