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MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
Technology Benefits
Eliminates polarization fields More flexibility in growth variables
Technology Application
Growth of non-polar GaN films GaN-based devices This technology is available for a non-exclusive license. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.
Detailed Technology Description
Researchers at the University of California, Santa Barbara have developed methods for successfully growingplanar non-polar m-plane gallium nitride (GaN) with metalorganic chemical vapor deposition (MOCVD). These methods takes advantage of non-polar nature of m-plane GaN to eliminate polarization fields, and gives rise to flexibility in growth variables, such as temperature, pressure and precursor flows, utilizing the advantage of m-GaN stability during growth.
Supplementary Information
Patent Number: US7338828B2 Application Number: US2006444083A Inventor: Imer, Bilge M. | Speck, James S. | DenBaars, Steven P. | Nakamura, Shuji Priority Date: 31 May 2005 Priority Number: US7338828B2 Application Date: 31 May 2006 Publication Date: 4 Mar 2008 IPC Current: H01L002100 US Class: 438046 | 257E21112 | 257E21121 | 257E21127 | 438481 | 438590 | 438604 | 438767 Assignee Applicant: The Regents of the University of California | Japan Science and Technology Agency Title: Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) Usefulness: Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) Summary: For growing a planar non-polar m-plane III-nitride epitaxial film useful in the fabrication of device, wafer, substrate or template (claimed). Novelty: Growing planar non-polar m-plane III-nitride epitaxial film useful in fabrication of, e.g. wafer, comprises growing non-polar m-plane III-nitride on substrate using metalorganic chemical vapor deposition
Industry
Optics
Sub Group
LED/OLED
Application No.
7338828
Others
Background
It is relatively easy to grow c-plane GaN due to its large growth window (pressure, temperature and precursor flows) and its stability. However, as a result of c-plane growth, each material layer suffers from separation of electrons and holes to opposite faces of the layers. Furthermore, strain at the interfaces between adjacent layers gives rise to piezoelectric polarization, causing further charge separation. Such polarization effects decrease the likelihood of electrons and holes recombining, causing the device to perform poorly.