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Reduction in polarization and the associated increase in internal quantum efficiency for certain devices Easier to grow compared to non-polar nitride films
Technology Application
Production of planar semi-polar gallium nitride This technology is available for a non-exclusive license.See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.
Detailed Technology Description
Researchers at the University of California, Santa Barbara have developed a technique for the growth of planar films of semi-polar nitrides, in which a large area of (Al, In, Ga)N is grown parallel to the substrate surface. For example, samples can be grown on 10 mm x 10 mm or 2 inch diameter substrates. The advantage of semi-polar over c-plane nitride films is the reduction in polarization and the associated increase in internal quantum efficiency for certain devices.
Supplementary Information
Patent Number: US7220324B2 Application Number: US2006372914A Inventor: Baker, Troy J. | Haskell, Benjamin A. | Fini, Paul T. | DenBaars, Steven P. | Speck, James S. | Nakamura, Shuji Priority Date: 10 Mar 2005 Priority Number: US7220324B2 Application Date: 10 Mar 2006 Publication Date: 22 May 2007 IPC Current: H01L002900 | H01L003300 US Class: 148033 | 257E21113 | 257E21121 | 257E21463 | 438046 | 438047 | 438479 Assignee Applicant: The Regents of the University of California Title: Technique for the growth of planar semi-polar gallium nitride Usefulness: Technique for the growth of planar semi-polar gallium nitride Summary: For growing nitride film e.g. gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), ternary and quaternary compounds of gallium nitride (AlGaN,InGaN,AlInGaN) on spinel substrate miscut and sapphire substrate in fabrication of visible and ultraviolet optoelectronic device and high power electronic device. Novelty: Nitride film growing method for fabrication of e.g. high power electronic device, involves growing planar, semipolar nitride film parallel to substrate surface
Industry
Optics
Sub Group
LED/OLED
Application No.
7220324
Others
Background
Current nitride technology for electronic and optoelectronic devices employs nitride films grown along the polar c-direction. However, conventional c-plane quantum well structures in III-nitride based optoelectronic and electronic devices suffer from the undesirable quantum-confined Stark effect (QCSE), due to the existence of strong piezoelectric effects and spontaneous polarizations. The strong built-in electric fields along the c-direction cause spatial separation of electrons and holes that in turn give rise to restricted carrier recombination efficiency, reduced oscillator strength, and red-shifted emission. The growth of non-polar GaN remains challenging and has not yet been widely adopted in the III-nitride industry.
