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Heterogeneous Composite Semiconductor Structures For Enhanced Oxide And Air Aperture Formation

Technology Benefits

The new UC technology provides the following benefits: Enhanced oxidation rates; Controllability of the aperture shape and size; Enhanced effectiveness of the resulting optical and/or current apertures.

Technology Application

This new technology has applications in producing oxide apertures and air apertures for semiconductor lasers, detectors, and transistors, particularly tapered air apertures on InP.

Detailed Technology Description

Scientists at the University of California have developed a novel heterogeneous composite oxide aperture. In this method, the shape and size of the aperture can be arbitrarily controlled and tailored to maximize the effectiveness by changing the compositions and thicknesses of the individual layers.

Supplementary Information

Patent Number: US7061955B2
Application Number: US2001953576A
Inventor: Kim, Jin Kwang | Huntington, Andrew Sumika
Priority Date: 15 Sep 2000
Priority Number: US7061955B2
Application Date: 14 Sep 2001
Publication Date: 13 Jun 2006
IPC Current: H01S000500 | H01L00310304 | H01L003310 | H01L003314 | H01S0005183 | H01L003330 | H01S000522
US Class: 372046013 | 257E31022 | 372046014
Assignee Applicant: The Regents of the University of California
Title: Heterogeneous composite semiconductor structures for enhanced oxide and air aperture formation for semiconductor lasers and detectors and method of manufacture
Usefulness: Heterogeneous composite semiconductor structures for enhanced oxide and air aperture formation for semiconductor lasers and detectors and method of manufacture
Summary: For forming enhanced oxide and air apertures in semiconductors and laser (both claimed). Also used with vertical-cavity surface emitting semiconductor laser (VCSEL) for long wavelengths to be used as optical sources for optical communication systems, optical interconnection and optical data processing. Also used to create air or oxide aperture in distributed Bragg reflectors (DBR).
Novelty: Semiconductor structure used for forming oxide and air apertures in semiconductor laser, comprises substrate and aperture layer comprising faster-oxidizing layer(s) adjacent to slower-oxidizing layer(s)

Industry

Optics

Sub Category

Optical Fiber

Application No.

7061955

Others

Tech ID/UC Case

10222/2001-085-0

Related Cases

2001-085-0

*Abstract

Oxide and air apertures can enhance the performance of semiconductor lasers and detectors. However, in material systems that do not accommodate epitaxial incorporation of highly oxidizing materials of sufficient thicknesses, such apertures are difficult to implement. This is specifically the case in AlGaInAsP systems. In these situations, the materials' slow oxidation rates and/or limited thicknesses restrict their use as optical and/or current apertures.

*IP Issue Date

Jun 13, 2006

*Principal Investigator

Name: Andrew Huntington

Department:

Name: Jin Kim

Department:

Country/Region

USA