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III-Nitride Tunnel Junction with Modified Interface

Technology Benefits

Improved device performance due to decreased operating voltage of devicesElimination of a need for a TCO or silver mirrorSimpler manufacturing process due to fewer processing stepsAbility to incorporate multiple active regions into a single device

Technology Application

LEDsEdge emitting laser diodesVertical cavity surface emitting lasers (VCSELs)Solar cells

Detailed Technology Description

Researchers at UC Santa Barbara have developed a method for improving the performance of semipolar III-nitride light-emitting devices. This method involves modification of the very highly doped (n+/p+) interface to reduce the energy barrier associated with tunneling and increase the tunneling current. The modification involves introducing extra charge carriers, such as dopant atoms, or impurities that results in electronic trap states that enhance tunneling.

Others

Background

Current commercially available III-nitride light-emitting diodes (LEDs) and edge emitting laser diodes use an active region in a biased p-n junction to allow for electron and hole injection. The p-GaN is difficult to contact electrically and has low hole concentration and mobility. This means that p-GaN cannot be used as a current spreading layer and that traditional p-contacts will add significant voltage to devices. Despite these inherent problems, all commercial light-emitting devices utilize a p-contact and a material other than p-GaN for current spreading, typically transparent conducting oxides (TCO).

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• Low Temperature Deposition of Magnesium Doped Nitride Films
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• (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
• Oxyfluoride Phosphors for Use in White Light LEDs
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• Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
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• Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals
• Methods for Fabricating III-Nitride Tunnel Junction Devices
• Colorimetric Sensing Of Amines
• Multifaceted III-Nitride Surface-Emitting Laser
• Laser Diode System For Horticultural Lighting
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• Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
• Laser Lighting System Incorporating an Additional Scattered Laser

Tech ID/UC Case

25740/2016-245-0

Related Cases

2016-245-0

*Abstract

A method for improving the performance of semipolar III-nitride light-emitting devices. 

*Principal Investigator

Name: Steven DenBaars

Department:

Name: John Leonard

Department:

Name: Tal Margalith

Department:

Name: Shuji Nakamura

Department:

Name: James Speck

Department:

Name: Benjamin Yonkee

Department:

Name: Erin Young

Department:

Country/Region

USA