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Researchers at the University of California, Santa Barbara have developed a novel process to achieve PEC etching of p-type semiconductors simply and efficiently. This method utilizes heterostructures to open up the possibility for a wide range of device fabrication processes requiring etching of p-type materials. The wet etch nature of the process provides the capability for rapid, low-damage etching compared to the traditional ion-assisted plasma etching techniques.
Supplementary Information
Patent Number: US8053264B2 Application Number: US2009464723A Inventor: Tamboli, Adele | Hu, Evelyn Lynn | Schmidt, Mathew C. | Nakamura, Shuji | DenBaars, Steven P. Priority Date: 12 May 2008 Priority Number: US8053264B2 Application Date: 12 May 2009 Publication Date: 8 Nov 2011 IPC Current: H01L00213213 US Class: 438047 | 257E21217 | 438094 | 438746 Assignee Applicant: The Regents of the University of California Title: Photoelectrochemical etching of P-type semiconductor heterostructures Usefulness: Photoelectrochemical etching of P-type semiconductor heterostructures Summary: The method is useful for photoelectrochemical wet etching of a p-type gallium nitride semiconductor layer in a device structure. Novelty: Photoelectrochemical wet etching of p-type gallium nitride semiconductor layer in device structure, comprises etching p-type layer using internal electric field of structure, and generating electron-hole pairs in separate area of structure
Photoelectrochemical (PEC) wet etching is applied to a variety of semiconductors including GaAs, InP, and GaN. PEC etching GaN is of great interest due to the limited alternatives for room temperature, wet etching. This process consists of a light source and an electrochemical cell with the semiconductor being the anode and metal patterned directly onto it to act as the cathode. Typically, this etching is confined to the surface of n-type materials while electrons are confined to the surface in p-type materials. The electrons at p-type surfaces constrain etching and make PEC etching of p-type semiconductors difficult.
