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Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures

技術優勢: Ability to wet etch p-type materialsForm deep, anisotropic trenchesBandgap selectivityDefect selectivity

技術應用: Semiconductors

詳細技術說明: Researchers at the University of California, Santa Barbara have developed a novel process to achieve PEC etching of p-type semiconductors simply and efficiently. This method utilizes heterostructures to open up the possibility for a wide range of device fabrication processes requiring etching of p-type materials. The wet etch nature of the process provides the capability for rapid, low-damage etching compared to the traditional ion-assisted plasma etching techniques.

*Abstract: A novel process to achieve PEC etching of p-type semiconductors simply and efficiently.

*IP Issue Date: Nov 8, 2011

*Principal Investigation: Name: Steven DenBaars
Department:

Name: Evelyn Hu
Department:

Name: Shuji Nakamura
Department:

Name: Mathew Schmidt
Department:

Name: Adele Tamboli
Department:

附加資料: Patent Number: US8053264B2
Application Number: US2009464723A
Inventor: Tamboli, Adele | Hu, Evelyn Lynn | Schmidt, Mathew C. | Nakamura, Shuji | DenBaars, Steven P.
Priority Date: 12 May 2008
Priority Number: US8053264B2
Application Date: 12 May 2009
Publication Date: 8 Nov 2011
IPC Current: H01L00213213
US Class: 438047 | 257E21217 | 438094 | 438746
Assignee Applicant: The Regents of the University of California
Title: Photoelectrochemical etching of P-type semiconductor heterostructures
Usefulness: Photoelectrochemical etching of P-type semiconductor heterostructures
Summary: The method is useful for photoelectrochemical wet etching of a p-type gallium nitride semiconductor layer in a device structure.
Novelty: Photoelectrochemical wet etching of p-type gallium nitride semiconductor layer in device structure, comprises etching p-type layer using internal electric field of structure, and generating electron-hole pairs in separate area of structure

主要類別: 電子

細分類別: 半導體

申請號碼: 8053264

其他

Background

Photoelectrochemical (PEC) wet etching is applied to a variety of semiconductors including GaAs, InP, and GaN. PEC etching GaN is of great interest due to the limited alternatives for room temperature, wet etching. This process consists of a light source and an electrochemical cell with the semiconductor being the anode and metal patterned directly onto it to act as the cathode. Typically, this etching is confined to the surface of n-type materials while electrons are confined to the surface in p-type materials. The electrons at p-type surfaces constrain etching and make PEC etching of p-type semiconductors difficult.

Additional Technologies by these Inventors

Tech ID/UC Case

23783/2008-533-0

Related Cases

2008-533-0

國家/地區: 美國

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