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(In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance

Technology Benefits

•    Improved performance of existing devices which require a combination of layers with large lattice mismatch •    Mitigation of defect formation in active layers •    Increase the thickness of the active layers

Technology Application

•    LEDs •    Solar Cells This technology is available for licensing.

Detailed Technology Description

Researchers at the University of California, Santa Barbara have developed a novel invention to enable the fabrication of (In,Ga,Al)N optoelectronic devices with thick active layers containing a high concentration of indium (In). The In content of the active region can be increased while maintaining  a low lattice mismatch between the active region and the current carrying layers, mitigating deterioration of device performance in the green gap. Consequently, relaxed (In,Ga,Al)N films with a lattice constant between GaN and InN can be fabricated on GaN layers of all orientations, including (0001) c-plane GaN.

Supplementary Information

Patent Number: US20140131730A1
Application Number: US14073698A
Inventor: Keller, Stacia | Neufeld, Carl J. | Mishra, Umesh K. | DenBaars, Steven P.
Priority Date: 13 Jan 2012
Priority Number: US20140131730A1
Application Date: 6 Nov 2013
Publication Date: 15 May 2014
IPC Current: H01L003300 | H01L003332
US Class: 257076 | 438047
Assignee Applicant: The Regents of the University of California
Title: (IN,GA,AL)N OPTOELECTRONIC DEVICES GROWN ON RELAXED (IN,GA,AL)N-ON-GAN BASE LAYERS
Usefulness: (IN,GA,AL)N OPTOELECTRONIC DEVICES GROWN ON RELAXED (IN,GA,AL)N-ON-GAN BASE LAYERS
Summary: The method is useful for fabricating a heterostructure device (claimed), optoelectronic devices, relaxed indium gallium nitride films, electronic devices including transistors, and non-polar/semi-polar III-nitride optoelectronic and electronic devices including LEDs, and solar cells.
Novelty: Fabricating heterostructure device, comprises obtaining first layer or substrate, growing second layer on first layer or substrate, and forming second layer that is partially relaxed, where the first and second layers form heterojunction

Industry

Environmental/Green Technology

Sub Category

Solar Cell

Application No.

9076927

Others

Background

Currently, the fabrication of heterojunctions for optoelectronic devices is limited to the combination of layers with either the same lattice constants or layers where the thickness of the lattice mismatched layers did not exceed its critical thickness. However, thick active regions are attractive for light emitting diodes (LEDs) with significantly reduced droop and solar cells requiring thick active regions for efficient absorption. Moreover, LED development is restricted by the green gap due to deep green LED sources being difficult to produce.

 

Additional Technologies by these Inventors

• Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
• Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
• Nonpolar (Al, B, In, Ga)N Quantum Well Design
• Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• GaN-Based Thermoelectric Device for Micro-Power Generation
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Growth of Planar Semi-Polar Gallium Nitride
• Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
• Novel Current-Blocking Layer in High-Power Current Aperture Vertical Electron Transistors (CAVETs)
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• High Efficiency LED with Optimized Photonic Crystal Extractor
• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
• LED Device Structures with Minimized Light Re-Absorption
• Polarization-Doped Field Effect Transistors with Increased Performance
• Oxyfluoride Phosphors for Use in White Light LEDs
• III-V Nitride Device Structures on Patterned Substrates
• Growth of Semipolar III-V Nitride Films with Lower Defect Density
• High-Quality N-Face GaN, InN, AlN by MOCVD
• Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
• Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
• Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
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• Defect Reduction in GaN films using in-situ SiNx Nanomask
• Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
• Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
• Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
• High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
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• Low-Droop LED Structure on GaN Semi-polar Substrates
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• Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
• Improved Anisotropic Strain Control in Semipolar Nitride Devices
• III-Nitride Tunnel Junction with Modified Interface
• Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
• Increased Light Extraction with Multistep Deposition of ZnO on GaN
• Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
• Contact Architectures for Tunnel Junction Devices
• New Blue Phosphor for High Heat Applications
• A Structure For Increasing Mobility In A High-Electron-Mobility Transistor
• III-N Based Material Structures and Circuit Modules Based on Strain Management
• Methods for Fabricating III-Nitride Tunnel Junction Devices
• Achieving “Active P-Type Layer/Layers” In III-Nitride Epitaxial Or Device Structures Having Buried P-Type Layers
• Improved Performance of III-Nitride Photonic Devices
• Laser Diode System For Horticultural Lighting
• Fabricating Nitride Layers
• Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS
• Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
• Laser Lighting System Incorporating an Additional Scattered Laser
• Gated Electrodes For Electrolysis And Electrosynthesis
• Fabrication of N-face to Improve Telecommunications Efficiency
• Methods for Locally Changing the Electric Field Distribution in Electron Devices

Tech ID/UC Case

23146/2013-329-0

Related Cases

2013-329-0

*Abstract

A novel invention to enable the fabrication of (In,Ga,Al)N optoelectronic devices with thick active layers containing a high concentration of indium (In).

 

*Applications

•    LEDs

*IP Issue Date

Jul 7, 2015

*Principal Investigator

Name: Steven DenBaars

Department:

Name: Stacia Keller

Department:

Name: Umesh Mishra

Department:

Name: Carl Neufeld

Department:

Country/Region

USA