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(In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance

技術優勢

•    Improved performance of existing devices which require a combination of layers with large lattice mismatch •    Mitigation of defect formation in active layers •    Increase the thickness of the active layers

技術應用

•    LEDs •    Solar Cells This technology is available for licensing.

詳細技術說明

Researchers at the University of California, Santa Barbara have developed a novel invention to enable the fabrication of (In,Ga,Al)N optoelectronic devices with thick active layers containing a high concentration of indium (In). The In content of the active region can be increased while maintaining  a low lattice mismatch between the active region and the current carrying layers, mitigating deterioration of device performance in the green gap. Consequently, relaxed (In,Ga,Al)N films with a lattice constant between GaN and InN can be fabricated on GaN layers of all orientations, including (0001) c-plane GaN.

*Abstract

A novel invention to enable the fabrication of (In,Ga,Al)N optoelectronic devices with thick active layers containing a high concentration of indium (In).

 

*Applications

•    LEDs

*IP Issue Date

Jul 7, 2015

*Principal Investigation

Name: Steven DenBaars

Department:

Name: Stacia Keller

Department:

Name: Umesh Mishra

Department:

Name: Carl Neufeld

Department:

附加資料

Patent Number: US20140131730A1
Application Number: US14073698A
Inventor: Keller, Stacia | Neufeld, Carl J. | Mishra, Umesh K. | DenBaars, Steven P.
Priority Date: 13 Jan 2012
Priority Number: US20140131730A1
Application Date: 6 Nov 2013
Publication Date: 15 May 2014
IPC Current: H01L003300 | H01L003332
US Class: 257076 | 438047
Assignee Applicant: The Regents of the University of California
Title: (IN,GA,AL)N OPTOELECTRONIC DEVICES GROWN ON RELAXED (IN,GA,AL)N-ON-GAN BASE LAYERS
Usefulness: (IN,GA,AL)N OPTOELECTRONIC DEVICES GROWN ON RELAXED (IN,GA,AL)N-ON-GAN BASE LAYERS
Summary: The method is useful for fabricating a heterostructure device (claimed), optoelectronic devices, relaxed indium gallium nitride films, electronic devices including transistors, and non-polar/semi-polar III-nitride optoelectronic and electronic devices including LEDs, and solar cells.
Novelty: Fabricating heterostructure device, comprises obtaining first layer or substrate, growing second layer on first layer or substrate, and forming second layer that is partially relaxed, where the first and second layers form heterojunction

主要類別

環保/綠色科技

細分類別

太陽能電池

申請號碼

9076927

其他

Background

Currently, the fabrication of heterojunctions for optoelectronic devices is limited to the combination of layers with either the same lattice constants or layers where the thickness of the lattice mismatched layers did not exceed its critical thickness. However, thick active regions are attractive for light emitting diodes (LEDs) with significantly reduced droop and solar cells requiring thick active regions for efficient absorption. Moreover, LED development is restricted by the green gap due to deep green LED sources being difficult to produce.

 

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Tech ID/UC Case

23146/2013-329-0

Related Cases

2013-329-0

國家/地區

美國