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Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films

Technology Benefits

Substantial improvement in (GaN) film quality Reduced dislocation and stacking fault densities

Technology Application

Fabrication of GaN Films GaN optoelectronic devices  This technology is available for a non-exclusive license.

Detailed Technology Description

Researchers at the University of California, Santa Barbara have developed a novel method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. As a result of this invention, it is now possible to grow high-quality, thick non-polar m-plane GaN films that may be subsequently used as substrates for the growth of improved electronic and optoelectronic devices by a variety of growth techniques.

Supplementary Information

Patent Number: US7208393B2
Application Number: US2005140893A
Inventor: Haskell, Benjamin A. | McLaurin, Melvin B. | DenBaars, Steven P. | Speck, James Stephen | Nakamura, Shuji
Priority Date: 15 Apr 2002
Priority Number: US7208393B2
Application Date: 31 May 2005
Publication Date: 24 Apr 2007
IPC Current: H01L002136 | C30B002502 | C30B002940 | H01L002100 | H01L002120 | H01L0021205 | H01L002131 | H01L0021469
US Class: 438481 | 257E21097 | 257E21121 | 257E21131 | 438479
Assignee Applicant: The Regents of the University of California
Title: Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
Usefulness: Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
Summary: For growing planar m-plane gallium nitride (GaN) films for use as substrates for polarization-free device growth (claimed).
Novelty: Growing planar m-plane gallium nitride films for use as substrates for polarization-free device growth, by performing direct growth by hydride vapor phase epitaxy, and reducing threading dislocation and defect densities

Industry

Optics

Sub Category

LED/OLED

Application No.

7208393

Others

Background

Current nitride technology for electronic and optoelectronic devices employs nitride films grown along the polar c-direction. However, conventional c-plane quantum well structures in III-nitride based optoelectronic and electronic devices suffer from the undesirable quantum-confined Stark effect (QCSE), due to the existence of strong piezoelectric effects and spontaneous polarizations. Thus, there is a need for an efficient approach to eliminating the spontaneous and piezoelectric polarization effects in GaN optoelectronic devices.

Additional Technologies by these Inventors

• Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
• Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
• Nonpolar (Al, B, In, Ga)N Quantum Well Design
• Improved Manufacturing of Semiconductor Lasers
• Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
• Etching Technique for the Fabrication of Thin (Al, In, Ga)N Layers
• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• GaN-Based Thermoelectric Device for Micro-Power Generation
• Method for Growing High-Quality Group III-Nitride Crystals
• Growth of Planar Semi-Polar Gallium Nitride
• Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
• Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
• Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure
• Phosphor-Free White Light Source
• Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
• High Efficiency LED with Optimized Photonic Crystal Extractor
• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
• LED Device Structures with Minimized Light Re-Absorption
• (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
• Oxyfluoride Phosphors for Use in White Light LEDs
• III-V Nitride Device Structures on Patterned Substrates
• Growth of Semipolar III-V Nitride Films with Lower Defect Density
• Improved GaN Substrates Prepared with Ammonothermal Growth
• Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
• Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
• Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
• Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures
• Photoelectrochemical Etching for Chip Shaping Of LEDs
• Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
• Method for Manufacturing Improved III-Nitride LEDs and Laser Diodes: Monolithic Integration of Optically Pumped and Electrically Injected III-Nitride LEDs
• Defect Reduction in GaN films using in-situ SiNx Nanomask
• Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
• Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
• Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
• High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-150)
• Nonpolar III-Nitride LEDs With Long Wavelength Emission
• Method for Growing Self-Assembled Quantum Dot Lattices
• Method for Increasing GaN Substrate Area in Nitride Devices
• Flexible Arrays of MicroLEDs using the Photoelectrochemical (PEC) Liftoff Technique
• Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
• UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
• Low-Droop LED Structure on GaN Semi-polar Substrates
• Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
• Growth of High-Performance M-plane GaN Optical Devices
• Method for Enhancing Growth of Semipolar Nitride Devices
• Transparent Mirrorless (TML) LEDs
• Solid Solution Phosphors for Use in Solid State White Lighting Applications
• Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
• Planar, Nonpolar M-Plane III-Nitride Films Grown on Miscut Substrates
• High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
• High Light Extraction Efficiency III-Nitride LED
• Tunable White Light Based on Polarization-Sensitive LEDs
• Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
• Improved Anisotropic Strain Control in Semipolar Nitride Devices
• III-Nitride Tunnel Junction with Modified Interface
• Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
• Increased Light Extraction with Multistep Deposition of ZnO on GaN
• Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
• Calcium Impurity Reduction for Improved Light-Emitting Devices
• Contact Architectures for Tunnel Junction Devices
• New Blue Phosphor for High Heat Applications
• Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals
• Methods for Fabricating III-Nitride Tunnel Junction Devices
• Multifaceted III-Nitride Surface-Emitting Laser
• Laser Diode System For Horticultural Lighting
• Fabricating Nitride Layers
• Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS
• Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
• Laser Lighting System Incorporating an Additional Scattered Laser

Tech ID/UC Case

21908/2004-636-0

Related Cases

2004-636-0

*Abstract

A novel method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films.

*IP Issue Date

Apr 24, 2007

*Principal Investigator

Name: Steven DenBaars

Department:

Name: Benjamin Haskell

Department:

Name: Melvin McLaurin

Department:

Name: Shuji Nakamura

Department:

Name: James Speck

Department:

Country/Region

USA