Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
技术优势
Substantial improvement in (GaN) film quality Reduced dislocation and stacking fault densities
技术应用
Fabrication of GaN Films GaN optoelectronic devices This technology is available for a non-exclusive license.
详细技术说明
Researchers at the University of California, Santa Barbara have developed a novel method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. As a result of this invention, it is now possible to grow high-quality, thick non-polar m-plane GaN films that may be subsequently used as substrates for the growth of improved electronic and optoelectronic devices by a variety of growth techniques.
附加资料
Patent Number: US7208393B2 Application Number: US2005140893A Inventor: Haskell, Benjamin A. | McLaurin, Melvin B. | DenBaars, Steven P. | Speck, James Stephen | Nakamura, Shuji Priority Date: 15 Apr 2002 Priority Number: US7208393B2 Application Date: 31 May 2005 Publication Date: 24 Apr 2007 IPC Current: H01L002136 | C30B002502 | C30B002940 | H01L002100 | H01L002120 | H01L0021205 | H01L002131 | H01L0021469 US Class: 438481 | 257E21097 | 257E21121 | 257E21131 | 438479 Assignee Applicant: The Regents of the University of California Title: Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy Usefulness: Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy Summary: For growing planar m-plane gallium nitride (GaN) films for use as substrates for polarization-free device growth (claimed). Novelty: Growing planar m-plane gallium nitride films for use as substrates for polarization-free device growth, by performing direct growth by hydride vapor phase epitaxy, and reducing threading dislocation and defect densities
主要类别
光学
细分类别
发光二极管/有机发光二极管
申请号码
7208393
其他
Background
Current nitride technology for electronic and optoelectronic devices employs nitride films grown along the polar c-direction. However, conventional c-plane quantum well structures in III-nitride based optoelectronic and electronic devices suffer from the undesirable quantum-confined Stark effect (QCSE), due to the existence of strong piezoelectric effects and spontaneous polarizations. Thus, there is a need for an efficient approach to eliminating the spontaneous and piezoelectric polarization effects in GaN optoelectronic devices.
