An Electro-absorption Modulator Integratable with Silicon Vlsi
- Technology Benefits
- Lower cost compared to traditional III-V EA modulators Ease of fabrication Enables higher integration of components used in optical networks Allows for high-speed chip-to-chip interconnect for systems that use silicon VLSI circuits
- Technology Application
- High-speed chip-to-chip interconnects for silicon VLSI circuits Low cost, silicon based, optical communication devices
- Detailed Technology Description
- The invention discloses an EA modulator with semiconductor quantum dots in a vertical cavity that consists of two Photonic Band Gap structures that can easily be fabricated during the back end of the process in conventional Si CMOS fabrication facilities.
- Supplementary Information
- Patent Number: US7589882B2
Application Number: US2007871024A
Inventor: Xie, Ya-Hong | Shi, Bin
Priority Date: 18 Apr 2005
Priority Number: US7589882B2
Application Date: 11 Oct 2007
Publication Date: 15 Sep 2009
IPC Current: G02F000103
US Class: 359247 | 359248 | 359263 | 359318
Assignee Applicant: The Regents of the University of California
Title: Optical transceiver integratable with silicon VLSI
Usefulness: Optical transceiver integratable with silicon VLSI
Summary: Used for an optical transceiver (claimed).
Novelty: Electro-optical modulator for optical transceiver, has vertical cavity disposed on integrated circuit, where vertical cavity modulates optical signal reflected by light beam in response to variation of electric field
- Industry
- Electronics
- Sub Category
- Circuit Design
- Application No.
- 7589882
- Others
-
State of Development
The invention has yet to be physically proven but the underlying physical process has been experimentally demonstrated.
Background
As the demand for bandwidth continues to increase, it will be necessary to deploy low cost optical communication links that are closer to the end user than ever before. Furthermore, as silicon VLSI circuits achieve ever higher data rates, system performance will eventually be limited by standard low-speed chip-to-chip interconnect. Electro-absorption (EA) modulators are key components in optical networks and have recently been considered as solutions to the problem of chip-to-chip interconnect. However, EA modulators are traditionally fabricated in expensive III-V technologies, making them unsuitable for low cost optical systems or for the interconnection of silicon VLSI circuits. Therefore, a silicon based EA modulator, like the one disclosed here, offers significant benefits over traditional III-V EA modulators.
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Tech ID/UC Case
20318/2003-155-0
Related Cases
2003-155-0
- *Abstract
-
UCLA researchers in the department of Material Science and Engineering have developed an electro-absorption modulator that can be fabricated in silicon based technologies and therefore integrated into silicon VLSI circuits.
- *IP Issue Date
- Sep 15, 2009
- *Principal Investigator
-
Name: Bin Shi
Department:
Name: Ya-Hong Xie
Department:
- Country/Region
- USA
