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An Electro-absorption Modulator Integratable with Silicon Vlsi

技术优势: Lower cost compared to traditional III-V EA modulators Ease of fabrication Enables higher integration of components used in optical networks Allows for high-speed chip-to-chip interconnect for systems that use silicon VLSI circuits

技术应用: High-speed chip-to-chip interconnects for silicon VLSI circuits Low cost, silicon based, optical communication devices

详细技术说明: The invention discloses an EA modulator with semiconductor quantum dots in a vertical cavity that consists of two Photonic Band Gap structures that can easily be fabricated during the back end of the process in conventional Si CMOS fabrication facilities.

*Abstract: UCLA researchers in the department of Material Science and Engineering have developed an electro-absorption modulator that can be fabricated in silicon based technologies and therefore integrated into silicon VLSI circuits.

*IP Issue Date: Sep 15, 2009

*Principal Investigation: Name: Bin Shi
Department:

Name: Ya-Hong Xie
Department:

附加资料: Patent Number: US7589882B2
Application Number: US2007871024A
Inventor: Xie, Ya-Hong | Shi, Bin
Priority Date: 18 Apr 2005
Priority Number: US7589882B2
Application Date: 11 Oct 2007
Publication Date: 15 Sep 2009
IPC Current: G02F000103
US Class: 359247 | 359248 | 359263 | 359318
Assignee Applicant: The Regents of the University of California
Title: Optical transceiver integratable with silicon VLSI
Usefulness: Optical transceiver integratable with silicon VLSI
Summary: Used for an optical transceiver (claimed).
Novelty: Electro-optical modulator for optical transceiver, has vertical cavity disposed on integrated circuit, where vertical cavity modulates optical signal reflected by light beam in response to variation of electric field

主要类别: 电子

细分类别: 电路设计

申请号码: 7589882

其他

State of Development

The invention has yet to be physically proven but the underlying physical process has been experimentally demonstrated.

Background

As the demand for bandwidth continues to increase, it will be necessary to deploy low cost optical communication links that are closer to the end user than ever before. Furthermore, as silicon VLSI circuits achieve ever higher data rates, system performance will eventually be limited by standard low-speed chip-to-chip interconnect. Electro-absorption (EA) modulators are key components in optical networks and have recently been considered as solutions to the problem of chip-to-chip interconnect. However, EA modulators are traditionally fabricated in expensive III-V technologies, making them unsuitable for low cost optical systems or for the interconnection of silicon VLSI circuits. Therefore, a silicon based EA modulator, like the one disclosed here, offers significant benefits over traditional III-V EA modulators.

Additional Technologies by these Inventors

Tech ID/UC Case

20318/2003-155-0

Related Cases

2003-155-0

国家/地区: 美国

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