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Permeable Polysilicon Thin Film Filter

Technology Benefits

May be manufactured using standard thin film deposition technologyFilter membranes are simpler and more economical to produceMembranes have pore diameter in 10nm - 50 nm range

Technology Application

Micromachined systems and other precision devicesSeparation of biological fluidsFiltration of liquids or gases containing entrained particlesSemipermeable membrane coverings for microsensors or other devices

Detailed Technology Description

None

Supplementary Information

Patent Number: US6780786B2
Application Number: US2001994280A
Inventor: Dougherty, George M.
Priority Date: 26 Nov 2001
Priority Number: US6780786B2
Application Date: 26 Nov 2001
Publication Date: 24 Aug 2004
IPC Current: B01D007102 | B81B000300 | H01L0021285 | H01L002916
US Class: 438758 | 21032184 | 21050025 | 257E21166 | 257E29082 | 4270023 | 427167 | 427574 | 438001 | 438022 | 438745 | 1566251 | 427719
Assignee Applicant: The Regents of the University of California
Title: Method for producing a porous silicon film
Usefulness: Method for producing a porous silicon film
Summary: In microelectrochemical system and precision device, for separation of plasma from blood, for filtering liquids or gases that contain entrained particles and for forming semipermeable membrane covering for microsensor and other devices.
Novelty: Filter membrane structure used for e.g. separation of plasma from blood, has conformal layer formed on silicon film having grain structure, to provide selected chemical or biological function

Industry

Chemical/Material

Sub Category

Chemical/Material Application

Application No.

6780786

Others

Tech ID/UC Case

17084/2001-106-0

Related Cases

2001-106-0

*Abstract

Researchers at the University of California, Berkeley have developed a method of fabricating a thin film filter membrane composed of polycrystalline silicon wtih a surface roughness approximately equal to the membrane thickness. Under the fabrication process developed at Berkeley, pores form with lateral dimensions smaller than those of the silicon grains, typically in the 10 nanometer to 50 nanometer range.

*IP Issue Date

Aug 24, 2004

*Principal Investigator

Name: George Michael Dougherty

Department:

Country/Region

USA