InGaAsN/GaAs quantum well devices
- Summary
- Lead Inventors: Wen I WangSemiconductor quantum well device, such as a heterojunction diode laser, in which the quantum well layer is InGaAsN grown in the presence of antimony.The method for fabricating a semiconductor quantum well device involves forming a first layer of semiconductor material. A quantum well layer of InGaAsN is formed on the first layer of semiconductor material in the presence of Sb (antimony) with negligible incorporation of Sb in the quantum well layer. A second layer of semiconductor material is formed wherein the semiconductor materials of the first layer and second layer each has a wider band gap than the InGaAsN of the quantum well layer.A quantum well pseudomorphic high electron mobility transistor having a relatively thick undoped buffer layer, with GaAs grown on a semi-insulating substrate is provided.
- Detailed Technology Description
- Semiconductor quantum well device, such as a heterojunction diode laser, in which the quantum well layer is InGaAsN grown in the presence of antimony.The method for fabricating a semiconductor quantum well device involves forming a first layer ...
- *Abstract
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None
- *Inquiry
- Calvin Chu Columbia Technology Ventures Tel: (212) 854-8444 Email: TechTransfer@columbia.edu
- *IR
- MS99/05/06
- *Principal Investigator
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- *Web Links
- Patent number: WO0079599
- Country/Region
- USA
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