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High Voltage N-Channel Insulated Gate Bipolar Transistor (IGBT) in Silicon Carbide
Summary
A Purdue University researcher has developed a method and process for fabricating IGBTs in SiC. The method avoids the high resistance introduced from substrates in current manufacturing methods, while preserving the advantages of an N-type MOS channel.
Technology Benefits
Provides enhanced conductivityP+ substrates are removed Very high parasitic saves resistance
Technology Application
MaterialsManufacturingCircuitryMicroelectronicsNanoelectronics
Detailed Technology Description
James Cooper Jr.Purdue Electrical and Computer Engineering
Countries
United States
Application No.
8,343,841
Country/Region
USA
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