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Ultrafast, low-voltage, nano-vacuum electronic devices

Detailed Technology Description
None
*Abstract
TechnologyThis invention deals with a new class of ultrafast nanoelectronic devices that offer femtosecond transit time (> 10 THz bandwidth) of charge carriers and yet operate at the single-electron level in room temperature, air ambient. We have invented a nanoscale vacuum electronic device structure that offers an ultrafast (fs transit time) and high current density (~105 A/cm2) operation at low voltage (~1 V) in room-temperature air ambient. ApplicationsTransistorsSensorsPatent StatusUS Patent 9,331,189 issuedUS Divisional 15/067,272 in prosecution
*Principal Investigator

Name: Hong Kim

Department: Electrical and Computer Engineering


Name: Siwapon Srisonphan

Department: Electrical and Computer Engineering
Country/Region
USA

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