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Ultrafast, low-voltage, nano-vacuum electronic devices

*Abstract: TechnologyThis invention deals with a new class of ultrafast nanoelectronic devices that offer femtosecond transit time (> 10 THz bandwidth) of charge carriers and yet operate at the single-electron level in room temperature, air ambient. We have invented a nanoscale vacuum electronic device structure that offers an ultrafast (fs transit time) and high current density (~105 A/cm2) operation at low voltage (~1 V) in room-temperature air ambient. ApplicationsTransistorsSensorsPatent StatusUS Patent 9,331,189 issuedUS Divisional 15/067,272 in prosecution

*Principal Investigation: Name: Hong Kim
Department: Electrical and Computer Engineering

Name: Siwapon Srisonphan
Department: Electrical and Computer Engineering

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