亚洲知识产权资讯网为知识产权业界提供一个一站式网上交易平台，协助业界发掘知识产权贸易商机，并与环球知识产权业界建立联系。无论你是知识产权拥有者正在出售您的知识产权，或是制造商需要购买技术以提高操作效能，又或是知识产权配套服务供应商，你将会从本网站发掘到有用的知识产权贸易资讯。
High Voltage N-Channel Insulated Gate Bipolar Transistor (IGBT) in Silicon Carbide
总结
A Purdue University researcher has developed a method and process for fabricating IGBTs in SiC. The method avoids the high resistance introduced from substrates in current manufacturing methods, while preserving the advantages of an N-type MOS channel.
技术优势
Provides enhanced conductivityP+ substrates are removed Very high parasitic saves resistance
技术应用
MaterialsManufacturingCircuitryMicroelectronicsNanoelectronics
详细技术说明
James Cooper Jr.Purdue Electrical and Computer Engineering
国家
United States
申请号码
8,343,841
国家/地区
美国
欲了解更多信息，请点击 这里
