High Voltage N-Channel Insulated Gate Bipolar Transistor (IGBT) in Silicon Carbide
- Summary
- A Purdue University researcher has developed a method and process for fabricating IGBTs in SiC. The method avoids the high resistance introduced from substrates in current manufacturing methods, while preserving the advantages of an N-type MOS channel.
- Technology Benefits
- Provides enhanced conductivityP+ substrates are removed Very high parasitic saves resistance
- Technology Application
- MaterialsManufacturingCircuitryMicroelectronicsNanoelectronics
- Detailed Technology Description
- James Cooper Jr.Purdue Electrical and Computer Engineering
- Countries
- United States
- Application No.
- 8,343,841
- *Abstract
-
- *Background
- Insulated Gate Bipolar Transistors (IGBTs) combine the low drive characteristic of metal oxide semiconductor field effect transistors and the high power handling characteristic of bipolar transistors. These features make IGBTs ideal for high voltage switching applications. The use of silicon carbide as a process material yields IGBTs with even higher breakdown voltage capability, but introduces high parasitic series resistance.
- *IP Issue Date
- Jan 1, 2013
- *IP Type
- Divisional
- *Stage of Development
- Prototype Testing
- *Web Links
- Purdue Office of Technology CommercializationPurdueInnovation and EntrepreneurshipJames Cooper Jr.Purdue Electrical and Computer Engineering
- Country/Region
- USA
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