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Rapid Synthesis of Highly Pure GaN Powder

Detailed Technology Description

This invention is a new process for synthesizing highly pure, single-phase Gallium Nitride (GaN) powder using molten Gallium (Ga), ammonia (NH3) and a Bismuth (Bi) catalyst.

Others

Patents: US 7569206; US 7381391

Wu, H.; Hunting, J.; DiSalvo, F.J.; Spencer, M.G. (2005) Rapid synthesis of high purity GaN powder Physica Status Solidi (c), 2(7), 2074-2078.

Country/Region

USA

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