Rapid Synthesis of Highly Pure GaN Powder
- 詳細技術說明
- This invention is a new process for synthesizing highly pure, single-phase Gallium Nitride (GaN) powder using molten Gallium (Ga), ammonia (NH3) and a Bismuth (Bi) catalyst.
- *Abstract
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This invention is a new process for synthesizing highly pure, single-phase Gallium Nitride (GaN) powder using molten Gallium (Ga), ammonia (NH3) and a Bismuth (Bi) catalyst. A 1000° C hot wall tube furnace is used for the Ga - NH3 reaction with an ammonia flow rate of 500 standard cubic centimeters per minute (sccm) and a reaction time of 5 hours. The Bi catalyst is easily removed by evaporation once synthesis is complete.
Purity of 99.9% can be achieved without additional purification steps, significantly reducing production time, waste, and cost. Analysis of the powder revealed hexagonal polycrystalline GaN composed of plate-like grains 1 to 20 m in diameter. This highly crystalline structure developed using this new process is responsible for improving the light emission property of GaN powder by 500 times over traditional manufacturing techniques.
Potential Applications
- Light emitting phosphors
- Precursor material for the growth of GaN thin films and bulk crystals
Advantages
- Reduced production time, waste, and cost
- Increased purity
- Increased crystalline structure
- Increased light emission (efficiency)
- *Licensing
- Patrick Govangpjg26@cornell.edu(607) 254-2330
- 其他
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- Patents: US 7569206; US 7381391
- Wu, H.; Hunting, J.; DiSalvo, F.J.; Spencer, M.G. (2005) Rapid synthesis of high purity GaN powder Physica Status Solidi (c), 2(7), 2074-2078.
- 國家/地區
- 美國
