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Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
Technology Benefits
Substantial improvement in (GaN) film quality Reduced dislocation and stacking fault densities
Technology Application
Fabrication of GaN Films GaN optoelectronic devices This technology is available for a non-exclusive license.
Detailed Technology Description
Researchers at the University of California, Santa Barbara have developed a novel method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. As a result of this invention, it is now possible to grow high-quality, thick non-polar m-plane GaN films that may be subsequently used as substrates for the growth of improved electronic and optoelectronic devices by a variety of growth techniques.
Supplementary Information
Patent Number: US7208393B2 Application Number: US2005140893A Inventor: Haskell, Benjamin A. | McLaurin, Melvin B. | DenBaars, Steven P. | Speck, James Stephen | Nakamura, Shuji Priority Date: 15 Apr 2002 Priority Number: US7208393B2 Application Date: 31 May 2005 Publication Date: 24 Apr 2007 IPC Current: H01L002136 | C30B002502 | C30B002940 | H01L002100 | H01L002120 | H01L0021205 | H01L002131 | H01L0021469 US Class: 438481 | 257E21097 | 257E21121 | 257E21131 | 438479 Assignee Applicant: The Regents of the University of California Title: Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy Usefulness: Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy Summary: For growing planar m-plane gallium nitride (GaN) films for use as substrates for polarization-free device growth (claimed). Novelty: Growing planar m-plane gallium nitride films for use as substrates for polarization-free device growth, by performing direct growth by hydride vapor phase epitaxy, and reducing threading dislocation and defect densities
Industry
Optics
Sub Group
LED/OLED
Application No.
7208393
Others
Background
Current nitride technology for electronic and optoelectronic devices employs nitride films grown along the polar c-direction. However, conventional c-plane quantum well structures in III-nitride based optoelectronic and electronic devices suffer from the undesirable quantum-confined Stark effect (QCSE), due to the existence of strong piezoelectric effects and spontaneous polarizations. Thus, there is a need for an efficient approach to eliminating the spontaneous and piezoelectric polarization effects in GaN optoelectronic devices.
