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GaN-Based Thermoelectric Device for Micro-Power Generation
Technology Benefits
Very stable at high temperatures (>825K) Low thermal conductivity Electrical conductivity maintained at the same level as standard nitride films
Technology Application
Thermoelectric Devices This technology is available for licensing. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.
Detailed Technology Description
Researchers at the University of California, Santa Barbara have developed a novel, highly-customizable device architecture for GaN thermoelectric micro power generators. The device structure consists of only n-type GaN with gold interconnections. Several measurements performed on this device proved the suitability of GaN at high operating temperatures for this application. For example, a maximum average temperature of 825K was achieved with no sign of device or contact degradation. This was the highest temperature tested due to limitations in the testing apparatus, not by device performance.
Supplementary Information
Patent Number: US8692105B2 Application Number: US13089138A Inventor: Ohta, Hiroaki | Sztein, Alexander | DenBaars, Steven P. | Nakamura, Shuji Priority Date: 16 Apr 2010 Priority Number: US8692105B2 Application Date: 18 Apr 2011 Publication Date: 8 Apr 2014 IPC Current: H01L003512 | H01L003530 US Class: 1362361 | 136205 Assignee Applicant: The Regents of the University of California Title: III-V nitride-based thermoelectric device Usefulness: III-V nitride-based thermoelectric device Summary: The group III-V nitride thermoelectric device is useful for micro-power generation. Novelty: Group III-V nitride thermoelectric device for micro-power generation, comprises Group III-V nitride semiconductor, and semiconductor film including stacking faults/dislocations, where lateral structure of semiconductor includes electrodes
Industry
Electronics
Sub Group
Semiconductor
Application No.
8692105
Others
Background
Currently practical thermoelectric technology consists mainly of Bi2Te3 based materials. These materials however are not only toxic and scarce, but have a maximum operating temperature of roughly 150°C. The current material used for high temperature applications is SiGe, but low efficiencies and limited room for improvement necessitate the search for an improved high temperature thermoelectric material. Wide bandgap GaN and its family of alloys are promising candidates to fill this role because they are non-toxic and very stable at high temperatures.
