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GaN-Based Thermoelectric Device for Micro-Power Generation

技术优势

Very stable at high temperatures (>825K) Low thermal conductivity Electrical conductivity maintained at the same level as standard nitride films

技术应用

Thermoelectric Devices  This technology is available for licensing. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.

详细技术说明

Researchers at the University of California, Santa Barbara have developed a novel, highly-customizable device architecture for GaN thermoelectric micro power generators. The device structure consists of only n-type GaN with gold interconnections. Several measurements performed on this device proved the suitability of GaN at high operating temperatures for this application. For example, a maximum average temperature of 825K was achieved with no sign of device or contact degradation.  This was the highest temperature tested due to limitations in the testing apparatus, not by device performance.

*Abstract

A novel, highly-customizable device architecture for GaN thermoelectric micro power generators.

 

*IP Issue Date

Apr 8, 2014

*Principal Investigation

Name: Steven DenBaars

Department:

Name: Shuji Nakamura

Department:

Name: Hiroaki Ohta

Department:

Name: Alexander Sztein

Department:

附加资料

Patent Number: US8692105B2
Application Number: US13089138A
Inventor: Ohta, Hiroaki | Sztein, Alexander | DenBaars, Steven P. | Nakamura, Shuji
Priority Date: 16 Apr 2010
Priority Number: US8692105B2
Application Date: 18 Apr 2011
Publication Date: 8 Apr 2014
IPC Current: H01L003512 | H01L003530
US Class: 1362361 | 136205
Assignee Applicant: The Regents of the University of California
Title: III-V nitride-based thermoelectric device
Usefulness: III-V nitride-based thermoelectric device
Summary: The group III-V nitride thermoelectric device is useful for micro-power generation.
Novelty: Group III-V nitride thermoelectric device for micro-power generation, comprises Group III-V nitride semiconductor, and semiconductor film including stacking faults/dislocations, where lateral structure of semiconductor includes electrodes

主要类别

电子

细分类别

半导体

申请号码

8692105

其他

Background

Currently practical thermoelectric technology consists mainly of Bi2Te3 based materials. These materials however are not only toxic and scarce, but have a maximum operating temperature of roughly 150°C. The current material used for high temperature applications is SiGe, but low efficiencies and limited room for improvement necessitate the search for an improved high temperature thermoelectric material. Wide bandgap GaN and its family of alloys are promising candidates to fill this role because they are non-toxic and very stable at high temperatures.

 

Additional Technologies by these Inventors

• Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
• Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
• Nonpolar (Al, B, In, Ga)N Quantum Well Design
• Improved Manufacturing of Semiconductor Lasers
• Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Method for Growing High-Quality Group III-Nitride Crystals
• Growth of Planar Semi-Polar Gallium Nitride
• Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
• Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
• Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure
• Phosphor-Free White Light Source
• Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
• High Efficiency LED with Optimized Photonic Crystal Extractor
• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
• LED Device Structures with Minimized Light Re-Absorption
• (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
• Oxyfluoride Phosphors for Use in White Light LEDs
• III-V Nitride Device Structures on Patterned Substrates
• Growth of Semipolar III-V Nitride Films with Lower Defect Density
• Improved GaN Substrates Prepared with Ammonothermal Growth
• Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
• Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
• Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
• Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures
• Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
• Method for Manufacturing Improved III-Nitride LEDs and Laser Diodes: Monolithic Integration of Optically Pumped and Electrically Injected III-Nitride LEDs
• Defect Reduction in GaN films using in-situ SiNx Nanomask
• Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
• Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
• Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
• High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-150)
• Nonpolar III-Nitride LEDs With Long Wavelength Emission
• Method for Increasing GaN Substrate Area in Nitride Devices
• Flexible Arrays of MicroLEDs using the Photoelectrochemical (PEC) Liftoff Technique
• Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
• UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
• Low-Droop LED Structure on GaN Semi-polar Substrates
• Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
• Growth of High-Performance M-plane GaN Optical Devices
• Method for Enhancing Growth of Semipolar Nitride Devices
• Transparent Mirrorless (TML) LEDs
• Solid Solution Phosphors for Use in Solid State White Lighting Applications
• Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
• Planar, Nonpolar M-Plane III-Nitride Films Grown on Miscut Substrates
• High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
• High Light Extraction Efficiency III-Nitride LED
• Tunable White Light Based on Polarization-Sensitive LEDs
• Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
• Improved Anisotropic Strain Control in Semipolar Nitride Devices
• III-Nitride Tunnel Junction with Modified Interface
• Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
• Increased Light Extraction with Multistep Deposition of ZnO on GaN
• Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
• Contact Architectures for Tunnel Junction Devices
• New Blue Phosphor for High Heat Applications
• Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals
• Methods for Fabricating III-Nitride Tunnel Junction Devices
• Multifaceted III-Nitride Surface-Emitting Laser
• Laser Diode System For Horticultural Lighting
• Fabricating Nitride Layers
• Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS
• Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
• Laser Lighting System Incorporating an Additional Scattered Laser

Tech ID/UC Case

21830/2009-389-0

Related Cases

2009-389-0

国家/地区

美国