Vertical-Stacked-Array-Transistor (VSAT) for Nonvolatile Memory Devices

Low cost to manufacture Simplified fabrication process Ultra-high-density Easy integration with peripheral circuits Improved off-current without sacrificing memory density

A viable candidate for low cost and high density memory

Researchers at UCLA have invented a robust and simple 3-D structure, VSAT, on a 100nm node for ultra-high-density NAND flash memory devices while improving sub-threshold performance and channel mobility.

Patent Number: US8541832B2
Application Number: US2010816771A
Inventor: Kim, Ji-Young | Wang, Kang L. | Park, Yong-Jik | Han, Jeong-Hee | Hong, Augustin Jinwoo
Priority Date: 23 Jul 2009
Priority Number: US8541832B2
Application Date: 16 Jun 2010
Publication Date: 24 Sep 2013
IPC Current: H01L0029792
US Class: 257324 | 36518518
Assignee Applicant: Samsung Electronics Co. Ltd. | The Regents of the University of California
Title: Integrated circuit memory devices having vertical transistor arrays therein and methods of forming same
Usefulness: Integrated circuit memory devices having vertical transistor arrays therein and methods of forming same
Novelty: Non-volatile memory device used for mass storage applications, comprises vertically-stacked array of charge trap memory cells, and a string/ground select transistor

Electronics

Circuit Design

State Of Development

The 3-D NAND flash memory cell, VSAT, has been successfully developed on the 100nm node. The anticipated storage capacity of VSAT is 128 GB with 16 multiple layers on the 50nm node.

Background

The NAND flash memory has a simple cell structure allowing for higher density and more memory capacity. Further, it is ideal for mobile devices because flash memory is highly durable and able to withstand mechanic shock, high pressure, temperature, immersion in water, etc. Solid state drives, based on NAND flash memory, are lower in cost compare to DRAM and are able to retain data without a constant power supply. However, the cost per gigabyte compared to the conventional hard drive is still considerably higher. Flash memory technology will need to evolve in order to continue to scale and to have a stronger presence in the marketplace

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Tech ID/UC Case

22265/2010-381-0

Related Cases

2010-381-0

USA

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