Vertical-Stacked-Array-Transistor (VSAT) for Nonvolatile Memory Devices
- 技术优势
- Low cost to manufacture Simplified fabrication process Ultra-high-density Easy integration with peripheral circuits Improved off-current without sacrificing memory density
- 技术应用
- A viable candidate for low cost and high density memory
- 详细技术说明
- Researchers at UCLA have invented a robust and simple 3-D structure, VSAT, on a 100nm node for ultra-high-density NAND flash memory devices while improving sub-threshold performance and channel mobility.
- *Abstract
-
UCLA researchers in the Department of Electrical Engineering have created a novel Vertical-Stacked-Array-Transistor (VSAT) for ultra-high-density and cost-effective NAND flash memory devices and solid state drives.
- *Principal Investigation
-
Name: Jeong-hee Han
Department:
Name: Augustin Hong
Department:
Name: Ji Young Kim
Department:
Name: Yong-Jik Park
Department:
Name: Kang Wang
Department:
- 附加资料
- Patent Number: US8541832B2
Application Number: US2010816771A
Inventor: Kim, Ji-Young | Wang, Kang L. | Park, Yong-Jik | Han, Jeong-Hee | Hong, Augustin Jinwoo
Priority Date: 23 Jul 2009
Priority Number: US8541832B2
Application Date: 16 Jun 2010
Publication Date: 24 Sep 2013
IPC Current: H01L0029792
US Class: 257324 | 36518518
Assignee Applicant: Samsung Electronics Co. Ltd. | The Regents of the University of California
Title: Integrated circuit memory devices having vertical transistor arrays therein and methods of forming same
Usefulness: Integrated circuit memory devices having vertical transistor arrays therein and methods of forming same
Novelty: Non-volatile memory device used for mass storage applications, comprises vertically-stacked array of charge trap memory cells, and a string/ground select transistor
- 主要类别
- 电子
- 细分类别
- 电路设计
- 其他
-
State Of Development
The 3-D NAND flash memory cell, VSAT, has been successfully developed on the 100nm node. The anticipated storage capacity of VSAT is 128 GB with 16 multiple layers on the 50nm node.
Background
The NAND flash memory has a simple cell structure allowing for higher density and more memory capacity. Further, it is ideal for mobile devices because flash memory is highly durable and able to withstand mechanic shock, high pressure, temperature, immersion in water, etc. Solid state drives, based on NAND flash memory, are lower in cost compare to DRAM and are able to retain data without a constant power supply. However, the cost per gigabyte compared to the conventional hard drive is still considerably higher. Flash memory technology will need to evolve in order to continue to scale and to have a stronger presence in the marketplace
Additional Technologies by these Inventors
- Relaxed SiGe Films by Surfactant Mediation
- Vertical Gate-Depleted Single Electron Transistors
- Novel Telegraph Signal Microscope For Visualizing Single Atoms And Detecting Defects In Nanotechnology Devices
- Novel Nanomaterial-based Thermo-Photovoltaic Cells
- Graphene Flash Memory Device
- Vsat Structure for Nonvolatile Memory Device
- Epitaxial Growth of Single Crystalline MgO on Germanium
- A Self-Organized Critical CMOS Circuit for Computation and Information Processing
- Anti-Ferromagnetic Magneto-Electric Spin-Orbit Read Logic
- Quasi Van Der Walls Epitaxy Of GaAs on Graphene
- Periodically Rippled Antenna
- Graphene-Polymer Nanocomposite Incorporating Chemically Doped Graphene-Polymer Heterostructure for Flexible and Transparent Conductive Films
- Fabrication Of 1D Sinusoidal Silicon Dioxide Substrate
- Strained Voltage-Controlled Magnetic Memory Elements and Devices
Tech ID/UC Case
22265/2010-381-0
Related Cases
2010-381-0
- 国家/地区
- 美国
