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Controlled Nano-Doping of Ultra Thin Films

Detailed Technology Description

None

Supplementary Information

Patent Number: US7544398B1
Application Number: US2006411425A
Inventor: Chang, Jane P. | Van, Trinh Tu | Chiang, Tony | Deshpandey, Chandra | Lesser, Karl
Priority Date: 26 Apr 2005
Priority Number: US7544398B1
Application Date: 26 Apr 2006
Publication Date: 9 Jun 2009
IPC Current: H05H000124
US Class: 427537 | 117084 | 117108 | 438765 | 437539
Assignee Applicant: The Regents of the Univesity of California,Los Angeles
Title: Controlled nano-doping of ultra thin films
Usefulness: Controlled nano-doping of ultra thin films
Summary: Method of producing doped thin layer on substrate for copper interconnect used in semiconductor industry, optoelectronic component such as optoelectronic integrated circuit, optical waveguide and optical amplifier, and microelectronic component such as complementary metal oxide semiconductor gate dielectric and dynamic random access memory.
Novelty: Method of producing doped thin layer on substrate for copper interconnect used in semiconductor industry, involves depositing dopant precursor on substrate by atomic layer deposition method, and exposing deposited dopant precursor

Industry

Electronics

Sub Group

Circuit Design

Application No.

7544398

Others

Additional Technologies by these Inventors

Atomic Layer Deposition of Alkali Metal Containing Solid State Electrolyte for 3-D Micro-Batteries

Tech ID/UC Case

21697/2003-317-0

Related Cases

2003-317-0

Country/Region

USA

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