Controlled Nano-Doping of Ultra Thin Films
- 详细技术说明
- None
- *Abstract
-
The invention relates to methods for producing doped thin layers on substrates comprising the steps of depositing a dopant precursor on the substrate via an atomic layer deposition technique; and exposing the deposited dopant precursor to radicals. The methods can further comprise depositing a compound adjacent the dopant metal via an atomic layer deposition technique; and exposing the deposited compound to radicals, thereby providing a host. The invention relates to articles comprising approximately atomically thin layers of metals or metal oxides doped with at least one different metal or metal oxide. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
- *IP Issue Date
- Jun 9, 2009
- *Principal Investigation
-
Name: Jane Chang
Department:
Name: Tony Chiang
Department:
Name: Karl Leeser
Department:
Name: Trinh Tu Van
Department:
Name: Chandra Deshpandey
Department:
- 附加资料
- Patent Number: US7544398B1
Application Number: US2006411425A
Inventor: Chang, Jane P. | Van, Trinh Tu | Chiang, Tony | Deshpandey, Chandra | Lesser, Karl
Priority Date: 26 Apr 2005
Priority Number: US7544398B1
Application Date: 26 Apr 2006
Publication Date: 9 Jun 2009
IPC Current: H05H000124
US Class: 427537 | 117084 | 117108 | 438765 | 437539
Assignee Applicant: The Regents of the Univesity of California,Los Angeles
Title: Controlled nano-doping of ultra thin films
Usefulness: Controlled nano-doping of ultra thin films
Summary: Method of producing doped thin layer on substrate for copper interconnect used in semiconductor industry, optoelectronic component such as optoelectronic integrated circuit, optical waveguide and optical amplifier, and microelectronic component such as complementary metal oxide semiconductor gate dielectric and dynamic random access memory.
Novelty: Method of producing doped thin layer on substrate for copper interconnect used in semiconductor industry, involves depositing dopant precursor on substrate by atomic layer deposition method, and exposing deposited dopant precursor
- 主要类别
- 电子
- 细分类别
- 电路设计
- 申请号码
- 7544398
- 其他
-
Additional Technologies by these Inventors
Tech ID/UC Case
21697/2003-317-0
Related Cases
2003-317-0
- 国家/地区
- 美国
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