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A Double-Dose Ebeam Lithograpy Process
Technology Benefits
Large undercut and fine linewidth
Technology Application
Single electron transistor fabrication
Detailed Technology Description
Researchers at UC Irvine have developed a double-dose exposure process which easily achieves both higher linewidth resolution and a large undercut. Using this process, a top linewidth of 40 nm and undercut of more than 400nm can be achieved. This technique is important for electronic device applications such as the fabrication of single electron transistors.
Others
Tech ID/UC Case 20767/2006-334-0 Related Cases 2006-334-0
Country/Region
USA
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