A Double-Dose Ebeam Lithograpy Process
- 技术优势
- Large undercut and fine linewidth
- 技术应用
- Single electron transistor fabrication
- 详细技术说明
- Researchers at UC Irvine have developed a double-dose exposure process which easily achieves both higher linewidth resolution and a large undercut. Using this process, a top linewidth of 40 nm and undercut of more than 400nm can be achieved. This technique is important for electronic device applications such as the fabrication of single electron transistors.
- *Abstract
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In electron beam lithography (EBL), after developing, the cross section of the resist has a parabolic undercut with a linewidth determined by the exposure in the top resist layer resulting in a typical linewidth of 100nm.
- *Principal Investigation
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Name: Jia Lu
Department:
Name: Dawei Wang
Department:
- 其他
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Tech ID/UC Case
20767/2006-334-0
Related Cases
2006-334-0
- 国家/地区
- 美国
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