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Nano-electro-mechanical Non-volatile Memory (nemory)

Technology Benefits

Uses standard CMOS materials and processes, scaleable, low voltage levels, high density, three dimensional fabrication

Technology Application

Flash memory, storage, RAM

Detailed Technology Description

None

Supplementary Information

Patent Number: WO2007130919A3
Application Number: WO2007US67812A
Inventor: KAM, Hei | KING, Tsu-Jae
Priority Date: 1 May 2006
Priority Number: WO2007130919A3
Application Date: 30 Apr 2007
Publication Date: 9 Apr 2009
IPC Current: G11C001100 | G11C001150
Assignee Applicant: The Regents of the University of California
Title: NANO-ELECTRO-MECHANICAL MEMORY CELLS AND DEVICES | DISPOSITIFS ET CELLULES MÉMOIRE NANO-ÉLECTROMÉCANIQUES
Usefulness: NANO-ELECTRO-MECHANICAL MEMORY CELLS AND DEVICES | DISPOSITIFS ET CELLULES MÉMOIRE NANO-ÉLECTROMÉCANIQUES
Summary: Used in a mobile consumer electronic such as cellular phone, digital camera, camcorder, personal digital assistant, and moving picture experts group audio layer 3 (MP3) player.
Novelty: Nano-electro-mechanical memory cell e.g. floating-gate and Silicon-Oxide-Nitride-Oxide-Silicon-type memory cell, has mechanical beam provided with portion deflecting toward electrode in response to electrostatic force

Industry

Electronics

Sub Group

3C/Gadgets

Application No.

7839710

Others

Tech ID/UC Case

17609/2006-040-0

Related Cases

2006-040-0

Country/Region

USA

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