Nano-electro-mechanical Non-volatile Memory (nemory)
Uses standard CMOS materials and processes, scaleable, low voltage levels, high density, three dimensional fabrication
Flash memory, storage, RAM
None
Patent Number: WO2007130919A3
Application Number: WO2007US67812A
Inventor: KAM, Hei | KING, Tsu-Jae
Priority Date: 1 May 2006
Priority Number: WO2007130919A3
Application Date: 30 Apr 2007
Publication Date: 9 Apr 2009
IPC Current: G11C001100 | G11C001150
Assignee Applicant: The Regents of the University of California
Title: NANO-ELECTRO-MECHANICAL MEMORY CELLS AND DEVICES | DISPOSITIFS ET CELLULES MÉMOIRE NANO-ÉLECTROMÉCANIQUES
Usefulness: NANO-ELECTRO-MECHANICAL MEMORY CELLS AND DEVICES | DISPOSITIFS ET CELLULES MÉMOIRE NANO-ÉLECTROMÉCANIQUES
Summary: Used in a mobile consumer electronic such as cellular phone, digital camera, camcorder, personal digital assistant, and moving picture experts group audio layer 3 (MP3) player.
Novelty: Nano-electro-mechanical memory cell e.g. floating-gate and Silicon-Oxide-Nitride-Oxide-Silicon-type memory cell, has mechanical beam provided with portion deflecting toward electrode in response to electrostatic force
電子
計算機，通信和消費電子產品 /小工具
7839710
Tech ID/UC Case 17609/2006-040-0 Related Cases 2006-040-0
美國
