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Low Voltage Mems Flash Memory

Technology Benefits

Program/erase speed as fast as nanoseconds, at low voltage.Low voltage, high speed, superior retention time, and high density Memory core density comparable to state-of-the-art flash memory, with significantly reduced peripheral circuitry, to achieve high-density memory chip.Good scalability, which offers a solution for the 65nm CMOS technology node and beyond.

Technology Application

Flash memorySecure Flash Memory

Detailed Technology Description

None

Supplementary Information

Patent Number: US20090121273A1
Application Number: US2007664018A
Inventor: King, Tsu-Jae | Liu, Gang | She, Min
Priority Date: 29 Sep 2004
Priority Number: US20090121273A1
Application Date: 11 Dec 2008
Publication Date: 14 May 2009
IPC Current: H01L002968 | H01L0029788
US Class: 257316 | 257E2917 | 257E293
Title: Low-voltage memory having flexible gate charging element
Usefulness: Low-voltage memory having flexible gate charging element
Summary: Used in a personal computer, cellular phone, digital camera, smart-media, network, automotive and global positioning system (GPS).
Novelty: Floating gate flash memory device for use in e.g. digital camera, has source separated from drain by channel, where electrons are injected into floating gate via direct current from control gate

Industry

Electronics

Sub Group

3C/Gadgets

Application No.

20090121273

Others

Tech ID/UC Case

17370/2004-063-0

Related Cases

2004-063-0

Country/Region

USA

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