Low Voltage Mems Flash Memory
Program/erase speed as fast as nanoseconds, at low voltage.Low voltage, high speed, superior retention time, and high density Memory core density comparable to state-of-the-art flash memory, with significantly reduced peripheral circuitry, to achieve high-density memory chip.Good scalability, which offers a solution for the 65nm CMOS technology node and beyond.
Flash memorySecure Flash Memory
None
Patent Number: US20090121273A1
Application Number: US2007664018A
Inventor: King, Tsu-Jae | Liu, Gang | She, Min
Priority Date: 29 Sep 2004
Priority Number: US20090121273A1
Application Date: 11 Dec 2008
Publication Date: 14 May 2009
IPC Current: H01L002968 | H01L0029788
US Class: 257316 | 257E2917 | 257E293
Title: Low-voltage memory having flexible gate charging element
Usefulness: Low-voltage memory having flexible gate charging element
Summary: Used in a personal computer, cellular phone, digital camera, smart-media, network, automotive and global positioning system (GPS).
Novelty: Floating gate flash memory device for use in e.g. digital camera, has source separated from drain by channel, where electrons are injected into floating gate via direct current from control gate
電子
計算機，通信和消費電子產品 /小工具
20090121273
Tech ID/UC Case 17370/2004-063-0 Related Cases 2004-063-0
美國
