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InGaAsN/GaAs quantum well devices

Summary

Lead Inventors: Wen I WangSemiconductor quantum well device, such as a heterojunction diode laser, in which the quantum well layer is InGaAsN grown in the presence of antimony.The method for fabricating a semiconductor quantum well device involves forming a first layer of semiconductor material. A quantum well layer of InGaAsN is formed on the first layer of semiconductor material in the presence of Sb (antimony) with negligible incorporation of Sb in the quantum well layer. A second layer of semiconductor material is formed wherein the semiconductor materials of the first layer and second layer each has a wider band gap than the InGaAsN of the quantum well layer.A quantum well pseudomorphic high electron mobility transistor having a relatively thick undoped buffer layer, with GaAs grown on a semi-insulating substrate is provided.

Detailed Technology Description

Semiconductor quantum well device, such as a heterojunction diode laser, in which the quantum well layer is InGaAsN grown in the presence of antimony.The method for fabricating a semiconductor quantum well device involves forming a first layer ...

Country/Region

USA

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