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Process for Preparing Group IB-IIIA-Via Semiconducting Films

Detailed Technology Description

Methodsare provided for the production of supported monophasic group I-III-VIsemiconductor films. In the subject methods, a substrate is coated with group Iand III elements and then contacted with a reactive group VI element containingatmosphere under conditions sufficient to produce a substrate coated with acomposite of at least two different group I-III-IV alloys. The resultantcomposite coated substrate is then annealed in an inert atmosphere underconditions sufficient to convert the composite coating to a monophasic groupI-III-VI semiconductor film. The resultant supported semiconductor films finduse in photovoltaic applications, particularly as absorber layers in solarcells.

Countries

United States

Application No.

Patent Granted

Country/Region

USA

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