Process for Preparing Group IB-IIIA-Via Semiconducting Films
Methodsare provided for the production of supported monophasic group I-III-VIsemiconductor films. In the subject methods, a substrate is coated with group Iand III elements and then contacted with a reactive group VI element containingatmosphere under conditions sufficient to produce a substrate coated with acomposite of at least two different group I-III-IV alloys. The resultantcomposite coated substrate is then annealed in an inert atmosphere underconditions sufficient to convert the composite coating to a monophasic groupI-III-VI semiconductor film. The resultant supported semiconductor films finduse in photovoltaic applications, particularly as absorber layers in solarcells.
United States
Patent Granted
美国
