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SiC Power DMOSFETs with Self-Aligned Source Contacts
Summary
Purdue University researchers have developed a novel design for DMOSFETs with self-aligning source contacts, which reduce the size of the source contacts and consequently reduces the specific-on resistance of the device.
Technology Benefits
Reduces specific on-resistanceIncrease yield Decreased cost
Technology Application
Computer TechnologyCircuitryHardware
Detailed Technology Description
James Cooper Jr.Purdue Electrical and Computer Engineering
Countries
United States
Application No.
8,035,112
Country/Region
USA
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