SiC Power DMOSFETs with Self-Aligned Source Contacts
- 總結
- Purdue University researchers have developed a novel design for DMOSFETs with self-aligning source contacts, which reduce the size of the source contacts and consequently reduces the specific-on resistance of the device.
- 技術優勢
- Reduces specific on-resistanceIncrease yield Decreased cost
- 技術應用
- Computer TechnologyCircuitryHardware
- 詳細技術說明
- James Cooper Jr.Purdue Electrical and Computer Engineering
- *Abstract
-
- *Background
- In power double-diffused metal-oxide-semiconductor field-effect transistors (DMOSFETs) fabricated in the silicon carbide SiC process, it is difficult to find a process that yields consistent results without slightly hindering the performance of the device. In order to reduce misalignment errors, the source contacts are designed slightly larger than necessary to allow for adjustments. These misalignment errors can lead to large contact resistances.
- *IP Issue Date
- Oct 11, 2011
- *IP Type
- Utility
- *Stage of Development
- Proof of Concept
- *Web Links
- Purdue Office of Technology CommercializationPurdueInnovation and EntrepreneurshipJames Cooper Jr.Purdue Electrical and Computer Engineering
- 國家
- United States
- 申請號碼
- 8,035,112
- 國家/地區
- 美國
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