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Silicon-based ultra-violet LED

Summary

It introduces simple methodology to produce inexpensive and efficient semiconducting light-emitting diode (LED) with ultraviolet light emission, i.e. light having a wavelength of less than about 400 nm.

Technology Benefits

Simple, low cost and high efficiency

Technology Application

ultra-violet LEDs

Detailed Technology Description

It provides a complete description of the manufacturing process of LEDs to minimize the heat lost from the conversion of electrical energy to light emission.

Supplementary Information

Patent Number: US6869814B2
Application Number: US2004851254A
Inventor: Cheah, Kok Wai | Wong, Wai Kwok | Tam, Hoi Lam
Priority Date: 15 Mar 2002
Priority Number: US6869814B2
Application Date: 21 May 2004
Publication Date: 22 Mar 2005
IPC Current: H01L002100 | H01L002715 | H01L00310328 | H01L003334
US Class: 438022 | 257013 | 257079 | 257103 | 257749 | 257918 | 438024 | 438025 | 438028 | 438029 | 438046 | 438047
Title: Silicon-based ultra-violet LED
Usefulness: Silicon-based ultra-violet LED
Summary: For fabricating LED useful in LED assembly.
Novelty: Fabrication of light-emitting diode by forming insulating layer with microcavities on substrate, first conductive layer opposite insulating layer, and second conductive layer on insulating layer, and impregnating microcavities with gas

Industry

Optics

Sub Group

LED/OLED

Application Date

2004.05.21

Application No.

US 10/851,254

Others

Granted

ID No.

H01/CK/Sili/US02

Country/Region

Hong Kong

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