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Silicon-based ultra-violet LED

總結: It introduces simple methodology to produce inexpensive and efficient semiconducting light-emitting diode (LED) with ultraviolet light emission, i.e. light having a wavelength of less than about 400 nm.

詳細技術說明: It provides a complete description of the manufacturing process of LEDs to minimize the heat lost from the conversion of electrical energy to light emission.

附加資料: Patent Number: US6869814B2
Application Number: US2004851254A
Inventor: Cheah, Kok Wai | Wong, Wai Kwok | Tam, Hoi Lam
Priority Date: 15 Mar 2002
Priority Number: US6869814B2
Application Date: 21 May 2004
Publication Date: 22 Mar 2005
IPC Current: H01L002100 | H01L002715 | H01L00310328 | H01L003334
US Class: 438022 | 257013 | 257079 | 257103 | 257749 | 257918 | 438024 | 438025 | 438028 | 438029 | 438046 | 438047
Title: Silicon-based ultra-violet LED
Usefulness: Silicon-based ultra-violet LED
Summary: For fabricating LED useful in LED assembly.
Novelty: Fabrication of light-emitting diode by forming insulating layer with microcavities on substrate, first conductive layer opposite insulating layer, and second conductive layer on insulating layer, and impregnating microcavities with gas

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