Nano-Scale Metal-Insulator-Metal (MIM) Junction Realization through Conventional UV Photolithography and Wafer Polishing Techniques
- Technology Benefits
- Economical volume productionSimplified and scalable manufacturing process IC/MEMS fabrication foundry accepted
- Technology Application
- mass producing MIM diodes
- Detailed Technology Description
- USF inventors have developed a new CMOS-compatible process that is suitable for mass production of MIM tunneling diodes with sub-micron sized junction. Through a strategic combination of standard UV photolithography, regular wafer polishing techniques, and atomic layer deposition (ALD), MIM diode nano-scale junctions can be readily manufactured for volume production.
- *Abstract
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The University of South Florida has invented a novel fabrication method which is capable of mass producing Metal-Insulator-Metal (MIM) diodes with junction areas on the order of 0.01╬╝m^2 through a combination of UV photolithography and wafer polishing techniques.
- Country/Region
- USA
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