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Nano-Scale Metal-Insulator-Metal (MIM) Junction Realization through Conventional UV Photolithography and Wafer Polishing Techniques
技術優勢
Economical volume productionSimplified and scalable manufacturing process IC/MEMS fabrication foundry accepted
技術應用
mass producing MIM diodes
詳細技術說明
USF inventors have developed a new CMOS-compatible process that is suitable for mass production of MIM tunneling diodes with sub-micron sized junction. Through a strategic combination of standard UV photolithography, regular wafer polishing techniques, and atomic layer deposition (ALD), MIM diode nano-scale junctions can be readily manufactured for volume production.
國家/地區
美國
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