Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures
- Technology Benefits
- Ability to wet etch p-type materialsForm deep, anisotropic trenchesBandgap selectivityDefect selectivity
- Technology Application
- Semiconductors
- Detailed Technology Description
- Researchers at the University of California, Santa Barbara have developed a novel process to achieve PEC etching of p-type semiconductors simply and efficiently. This method utilizes heterostructures to open up the possibility for a wide range of device fabrication processes requiring etching of p-type materials. The wet etch nature of the process provides the capability for rapid, low-damage etching compared to the traditional ion-assisted plasma etching techniques.
- Supplementary Information
- Patent Number: US8053264B2
Application Number: US2009464723A
Inventor: Tamboli, Adele | Hu, Evelyn Lynn | Schmidt, Mathew C. | Nakamura, Shuji | DenBaars, Steven P.
Priority Date: 12 May 2008
Priority Number: US8053264B2
Application Date: 12 May 2009
Publication Date: 8 Nov 2011
IPC Current: H01L00213213
US Class: 438047 | 257E21217 | 438094 | 438746
Assignee Applicant: The Regents of the University of California
Title: Photoelectrochemical etching of P-type semiconductor heterostructures
Usefulness: Photoelectrochemical etching of P-type semiconductor heterostructures
Summary: The method is useful for photoelectrochemical wet etching of a p-type gallium nitride semiconductor layer in a device structure.
Novelty: Photoelectrochemical wet etching of p-type gallium nitride semiconductor layer in device structure, comprises etching p-type layer using internal electric field of structure, and generating electron-hole pairs in separate area of structure
- Industry
- Electronics
- Sub Category
- Semiconductor
- Application No.
- 8053264
- Others
-
Background
Photoelectrochemical (PEC) wet etching is applied to a variety of semiconductors including GaAs, InP, and GaN. PEC etching GaN is of great interest due to the limited alternatives for room temperature, wet etching. This process consists of a light source and an electrochemical cell with the semiconductor being the anode and metal patterned directly onto it to act as the cathode. Typically, this etching is confined to the surface of n-type materials while electrons are confined to the surface in p-type materials. The electrons at p-type surfaces constrain etching and make PEC etching of p-type semiconductors difficult. Additional Technologies by these Inventors
- Backside-Illuminated Photoelectrochemical (Bipec) Etching
- Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
- Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
- Nonpolar (Al, B, In, Ga)N Quantum Well Design
- Improved Manufacturing of Semiconductor Lasers
- Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
- Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
- GaN-Based Thermoelectric Device for Micro-Power Generation
- Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
- Method for Growing High-Quality Group III-Nitride Crystals
- Growth of Planar Semi-Polar Gallium Nitride
- Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
- MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
- Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
- Low Temperature Deposition of Magnesium Doped Nitride Films
- Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
- Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
- Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure
- Phosphor-Free White Light Source
- Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
- High Efficiency LED with Optimized Photonic Crystal Extractor
- Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
- LED Device Structures with Minimized Light Re-Absorption
- (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
- Oxyfluoride Phosphors for Use in White Light LEDs
- III-V Nitride Device Structures on Patterned Substrates
- Growth of Semipolar III-V Nitride Films with Lower Defect Density
- Improved GaN Substrates Prepared with Ammonothermal Growth
- Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
- Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
- Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
- Photoelectrochemical Etching for Chip Shaping Of LEDs
- Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
- Method for Manufacturing Improved III-Nitride LEDs and Laser Diodes: Monolithic Integration of Optically Pumped and Electrically Injected III-Nitride LEDs
- Defect Reduction in GaN films using in-situ SiNx Nanomask
- Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
- Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
- Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
- High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes
- Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
- Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-150)
- Nonpolar III-Nitride LEDs With Long Wavelength Emission
- Method for Increasing GaN Substrate Area in Nitride Devices
- Flexible Arrays of MicroLEDs using the Photoelectrochemical (PEC) Liftoff Technique
- Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
- UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
- Low-Droop LED Structure on GaN Semi-polar Substrates
- Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
- Growth of High-Performance M-plane GaN Optical Devices
- Method for Enhancing Growth of Semipolar Nitride Devices
- Transparent Mirrorless (TML) LEDs
- Solid Solution Phosphors for Use in Solid State White Lighting Applications
- Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
- Planar, Nonpolar M-Plane III-Nitride Films Grown on Miscut Substrates
- High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
- High Light Extraction Efficiency III-Nitride LED
- Tunable White Light Based on Polarization-Sensitive LEDs
- Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
- Improved Anisotropic Strain Control in Semipolar Nitride Devices
- III-Nitride Tunnel Junction with Modified Interface
- Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
- Increased Light Extraction with Multistep Deposition of ZnO on GaN
- Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
- Contact Architectures for Tunnel Junction Devices
- New Blue Phosphor for High Heat Applications
- Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals
- Methods for Fabricating III-Nitride Tunnel Junction Devices
- Multifaceted III-Nitride Surface-Emitting Laser
- Laser Diode System For Horticultural Lighting
- Fabricating Nitride Layers
- Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS
- Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
- Laser Lighting System Incorporating an Additional Scattered Laser
Tech ID/UC Case
23783/2008-533-0
Related Cases
2008-533-0
- *Abstract
-
A novel process to achieve PEC etching of p-type semiconductors simply and efficiently.
- *IP Issue Date
- Nov 8, 2011
- *Principal Investigator
-
Name: Steven DenBaars
Department:
Name: Evelyn Hu
Department:
Name: Shuji Nakamura
Department:
Name: Mathew Schmidt
Department:
Name: Adele Tamboli
Department:
- Country/Region
- USA
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