Low Resistance Ohmic Electrodes to p-Type III-Nitrides
- Detailed Technology Description
- The metallization method of the invention uses an oxide-forming metal layer to improve adhesion and getter surface contamination on oxides.
- Countries
- United States
- Application No.
- 6586328
- *Abstract
-
The metallization method of the invention uses an oxide-forming metal layer to improve adhesion and getter surface contamination on oxides. A high work function metal is then formed on the oxide-forming layer. An anneal is conducted to diffuse the high work function on metal through the oxide-forming layer. One or more metal cap layers may top the high work function metal to protect the high work function metal.
For more information about this technology, please contact the University of Illinois at Urbana-Champaign Office of Technology Management at otm@illinois.edu.
- *IP Issue Date
- None
- *IP Type
- Utility
- Country/Region
- USA
For more information, please click Here
