Low Resistance Ohmic Electrodes to p-Type III-Nitrides
- 詳細技術說明
- The metallization method of the invention uses an oxide-forming metal layer to improve adhesion and getter surface contamination on oxides.
- *Abstract
-
The metallization method of the invention uses an oxide-forming metal layer to improve adhesion and getter surface contamination on oxides. A high work function metal is then formed on the oxide-forming layer. An anneal is conducted to diffuse the high work function on metal through the oxide-forming layer. One or more metal cap layers may top the high work function metal to protect the high work function metal.
For more information about this technology, please contact the University of Illinois at Urbana-Champaign Office of Technology Management at otm@illinois.edu.
- *IP Issue Date
- None
- *IP Type
- Utility
- 國家
- United States
- 申請號碼
- 6586328
- 國家/地區
- 美國
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