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Quantum Dot--Improvement in Tunnel Contract Structures

Detailed Technology Description
A semiconductor light emitting device is disclosed. The device has a tunnel junction disposed between a p-type layer and an n-type layer.
Countries
United States
Application No.
6369403
*Abstract

A semiconductor light emitting device is disclosed. The device has a tunnel junction disposed between a p-type layer and an n-type layer. The tunnel junction includes a tunnel barrier that is a non-continuous layer. The device also includes means for causing lateral electron flow into the tunnel junction.

For more information about this technology, please contact the University of Illinois at Urbana-Champaign Office of Technology Management at otm@illinois.edu.
*IP Issue Date
None
*IP Type
Utility
Country/Region
USA

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