Quantum Dot--Improvement in Tunnel Contract Structures
- 详细技术说明
- A semiconductor light emitting device is disclosed. The device has a tunnel junction disposed between a p-type layer and an n-type layer.
- *Abstract
-
A semiconductor light emitting device is disclosed. The device has a tunnel junction disposed between a p-type layer and an n-type layer. The tunnel junction includes a tunnel barrier that is a non-continuous layer. The device also includes means for causing lateral electron flow into the tunnel junction.
For more information about this technology, please contact the University of Illinois at Urbana-Champaign Office of Technology Management at otm@illinois.edu.
- *IP Issue Date
- None
- *IP Type
- Utility
- 国家
- United States
- 申请号码
- 6369403
- 国家/地区
- 美国
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