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Process for Preparing Group IB-IIIA-Via Semiconducting Films

Detailed Technology Description: Methodsare provided for the production of supported monophasic group I-III-VIsemiconductor films. In the subject methods, a substrate is coated with group Iand III elements and then contacted with a reactive group VI element containingatmosphere under conditions sufficient to produce a substrate coated with acomposite of at least two different group I-III-IV alloys. The resultantcomposite coated substrate is then annealed in an inert atmosphere underconditions sufficient to convert the composite coating to a monophasic groupI-III-VI semiconductor film. The resultant supported semiconductor films finduse in photovoltaic applications, particularly as absorber layers in solarcells.

Countries: United States

Application No.: Patent Granted

*Abstract: None

*Inquiry: DeniseM. BierleinUniversity of DelawareOffice of Economic Innovation and PartnershipsLicensing AnalystTelephone: (302) 831-4005Email: deniseb@udel.edu

*IP Issue Date: None

*IP Type: Utility

Country/Region: USA

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